Micro-Contacts Testing Using a Micro-Force Sensor Compatible with Biological Systems

This paper presents the performance and reliability testing of microelectromechanical systems (MEMS) switches by using a micro-force sensor which was originally designed/used to conduct mechanical testing of biological cells. MEMS switches are key components for radio frequency (RF) applications due to their extremely low power consumption and small geometries over conventional technologies. However, unstable electrical contact resistance severely degrades the performance and reliability of such micro-switches. Therefore, our focus is to improve the performance and reliability of “cold” switched micro-contacts by using novel contact materials and engineered micro-contact surfaces. The contact metallurgies considered in this work are “similar” thin film combinations of Au, and composite Au/CNT. The non-engineered switch consists of a metallic hemispherical bump and a planar sheet as upper and lower contacts, respectively. On the other hand, the engineered switches have 2D pyramid structure in lower contacts while having a hemispherical bump at upper contact. Hemisphere on planar, Au-Au, contact pairs resulted in initial contact resistance (RC) values of ~0.1Ω (FC=200µN) that linearly increased to ~1.0Ω after ~10×106 cycles and then failed open (~10.0Ω) at ~20×106 switching cycles. The Au-Au/CNT composite, hemisphere on planar contact pair showed similar RC performance with extended reliability (~40×106 switching cycles) when the composite film was integrated into the lower planar contacted. Upper hemisphere on the 2D pyramid, Au-Au, contact pairs resulted in initial RC values of ~0.9Ω (FC=200µN) that linearly decreased to ~0.5Ω at \u3e10×106 cycles (not failed). This work suggests that the combination of engineered lower contacts and composite materials can significantly improve the performance and reliability of micro-switches

Using Cross-Linked SU-8 to Flip-Chip Bond, Assemble, and Package MEMS Devices

This paper investigates using an SU-8 photoresist as an adhesive material for flip-chip bonding, assembling, and packaging microelectromechanical systems devices. An important factor, when using SU-8 as an adhesive material is to control ultraviolet (UV) exposure during fabrication to maximize bond strength due to material cross linking. This approach is much improved over previous efforts where SU-8 bake times and temperatures where changed to alter material cross-linking. In this paper, bake times and temperatures were maintained constant and total UV exposure energy was varied. Once fabricated, bond strength was systematically tested to determine the tensile loads needed to separate bonded structures. The resulting separation force was shown to increase with UV exposure and ranged from 0.25 (5-s exposure) to 1.25 N (15-s exposure). The separation test data were then analyzed to determine the statistical significance of varying UV exposure time and its effect on SU-8 cross-linking and bond strength. The data show that total UV exposure dose is directly correlated with the bond strength of SU-8 bonded structures. By varying only UV dose, the separation force data exhibited a statistically significant dependence on SU-8 cross linking with a 5% probability of error. Further, SU-8 etch resiliency increased by approximately 40%-60% as cross linking was increased with UV exposures ranging from 5 to 15 s

Microelectromechanical Systems (MEMS) Resistive Heaters as Circuit Protection Devices

With increased opportunities for the exploitation (i.e., reverse engineering) of vulnerable electronic components and systems, circuit protection has become a critical issue. Circuit protection techniques are generally software-based and include cryptography (encryption/decryption), obfuscation of codes, and software guards. Examples of hardware-based circuit protection include protective coatings on integrated circuits, trusted foundries, and macro-sized components that self-destruct, thus destroying critical components. This paper is the first to investigate the use of microelectromechanical systems (MEMS) to provide hardware-based protection of critical electronic components to prevent reverse engineering or other exploitation attempts. Specifically, surface-micromachined polycrystalline silicon to be used as meandering resistive heaters were designed analytically and fabricated using a commercially available MEMS prototyping service (i.e., PolyMUMPs), and integrated with representative components potentially at risk for exploitation, in this case pseudomorphic high-electron mobility transistors (pHEMTs). The MEMS heaters were initiated to self-destruct, destroying a critical circuit component and thwart a reverse engineering attempt. Tests revealed reliable self-destruction of the MEMS heaters with approximately 25 V applied, resulting in either complete operational failure or severely altering the pHEMT device physics. The prevalent failure mechanism was metallurgical, in that the material on the surface of the device was changed, and the specific failure mode was the creation of a short-circuit. Another failure mode was degraded device operation due to permanently altered device physics related to either dopant diffusion or ohmic contact degradation. The results, in terms of the failure of a targeted electronic component, demonstrate the utility of using MEMS devices to protect critical components which are otherwise vulnerable to exploitation

Using Micro-Raman Spectroscopy to Assess MEMS Si/SiO2 Membranes Exhibiting Negative Spring Constant Behavior

We introduce a novel micro-mechanical structure that exhibits two regions of stable linear positive and negative stiffness. Springs, cantilevers, beams and any other geometry that display an increasing return force that is proportional to the displacement can be considered to have a “Hookean” positive spring constant, or stiffness. Less well known is the opposite characteristic of a reducing return force for a given deflection, or negative stiffness. Unfortunately many simple negative stiffness structures exhibit unstable buckling and require additional moving components during deflection to avoid deforming out of its useful shape. In Micro-Electro-Mechanical Systems (MEMS) devices, buckling caused by stress at the interface of silicon and thermally grown SiO2 causes tensile and compressive forces that will warp structures if the silicon layer is thin enough. The 1 mm2 membrane structures presented here utilizes this effect but overcome this limitation and empirically demonstrates linearity in both regions. The Si/SiO2 membranes presented deflect ~17 μm from their pre-released position. The load deflection curves produced exhibit positive linear stiffness with an inflection point holding nearly constant with a slight negative stiffness. Depositing a 0.05 μm titanium and 0.3 μm layer of gold on top of the Si/SiO2 membrane reduces the initial deflection to ~13.5 μm. However, the load deflection curve produced illustrates both a linear positive and negative spring constant with a fairly sharp inflection point. These results are potentially useful to selectively tune the spring constant of mechanical structures used in MEMS. The structures presented are manufactured using typical micromachining techniques and can be fabricated in-situ with other MEMS devices

Improving Gold/Gold Microcontact Performance and Reliability Under Low-Frequency AC Through Circuit Loading

This paper investigates the performance and reliability of microcontacts under low-frequency and low-amplitude ac test conditions. Current microcontact theory is based on dc tests adapted to RF applications. To help better apply dc theory to RF applications, frequencies between 100 Hz to 100 kHz were experimentally investigated. Microcontacts designed to conduct performance and reliability measurements were used, which in prior dc testing typically lasted for 100 million cycles or more. Under ac loads, at similar power levels, eight devices were tested under cold-switching conditions, and only one was still operational at 10 million cycles. The effect of external circuitry on dc loaded devices was also considered. The experimental data were presented for dc conditions, which demonstrated that both a parallel capacitance with a microcontact and a series inductance were highly detrimental. For all six tested devices, failure occurred typically in 100 thousand cycles or less. However, utilizing series resistive/capacitive circuits as well as parallel resistor/inductive resulted in improved performance, with only one device of the four tested failing prematurely, but those that lasted showed less variation in measure contact resistance throughout the lifetime of the device. Two devices were tested with passive contact protection using parallel and series resistances, and both devices lasted for the full test duration. Finally, the effects of applying circuit protection to microcontacts and repeating ac test conditions were investigated. Reliability and device lifetime were extended significantly (9.1% success rate without protection was increased to 87% success rate). It was also observed in several instances that devices that failed showed subtle signs of variance during contact closure measurements in the range of 5-30 μ N, indicating a possible means for accurately predicting device failure. For these failed devices, notable physical damage was observed using a scanning electron microscope

Stress Monitoring of Post-processed MEMS Silicon Microbridge Structures Using Raman Spectroscopy

Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated Micro-Electro-Mechanical Systems (MEMS) devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not well controlled during deposition. The residual stress; for example, tends to vary significantly for different deposition methods. Currently, few nondestructive techniques are available to measure residual stress in MEMS devices prior to the final release etch. In this research, micro-Raman spectroscopy is used to measure the residual stresses in polysilicon MEMS microbridge devices. This measurement technique was selected since it is nondestructive, fast, and provides the potential for in-situ stress monitoring. Raman spectroscopy residual stress profiles on unreleased and released MEMS microbridge beams are compared to analytical and FEM models to assess the viability of micro-Raman spectroscopy as an in-situ stress measurement technique. Raman spectroscopy was used during post-processing phosphorus ion implants on unreleased MEMS devices to investigate and monitor residual stress levels at key points during the post-processing sequences. As observed through Raman stress profiles and verified using on-chip test structures, the post-processing implants and accompanying anneals resulted in residual stress relaxation of over 90%

THz Metamaterial Characterization Using THz-TDS

The purpose of this chapter is to familiarize the reader with metamaterials and describe terahertz (THz) spectroscopy within metamaterials research. The introduction provides key background information on metamaterials, describes their history and their unique properties. These properties include negative refraction, backwards phase propagation, and the reversed Doppler Effect. The history and theory of metamaterials are discussed, starting with Veselago’s negative index materials work and Pendry’s publications on physical realization of metamaterials. The next sections cover measurement and analyses of THz metamaterials. THz Time-domain spectroscopy (THz-TDS) will be the key measurement tool used to describe the THz metamaterial measurement process. Sample transmission data from a metamaterial THz-TDS measurement is analyzed to give a better understanding of the different frequency characteristics of metamaterials. The measurement and analysis sections are followed by a section on the fabrication process of metamaterials. After familiarizing the reader with THz metamaterial measurement and fabrication techniques, the final section will provide a review of various methods by which metamaterials are made active and/or tunable. Several novel concepts were demonstrated in recent years to achieve such metamaterials, including photoconductivity, high electron mobility transistor (HEMT), microelectromechanical systems (MEMS), and phase change material (PCM)-based metamaterial structures

THz Metamaterial Characterization Using THz-TDS

The purpose of this chapter is to familiarize the reader with metamaterials and describe terahertz (THz) spectroscopy within metamaterials research. The introduction provides key background information on metamaterials, describes their history and their unique properties. These properties include negative refraction, backwards phase propagation, and the reversed Doppler Effect. The history and theory of metamaterials are discussed, starting with Veselago’s negative index materials work and Pendry’s publications on physical realization of metamaterials. The next sections cover measurement and analyses of THz metamaterials. THz Time-domain spectroscopy (THz-TDS) will be the key measurement tool used to describe the THz metamaterial measurement process. Sample transmission data from a metamaterial THz-TDS measurement is analyzed to give a better understanding of the different frequency characteristics of metamaterials. The measurement and analysis sections are followed by a section on the fabrication process of metamaterials. After familiarizing the reader with THz metamaterial measurement and fabrication techniques, the final section will provide a review of various methods by which metamaterials are made active and/or tunable. Several novel concepts were demonstrated in recent years to achieve such metamaterials, including photoconductivity, high electron mobility transistor (HEMT), microelectromechanical systems (MEMS), and phase change material (PCM)-based metamaterial structures

Novel Microelectromechanical Systems Image Reversal Fabrication Process Based on Robust SU-8 Masking Layers

This paper discusses a novel fabrication process that uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. MicroChem\u27s negative photoresist Nano™ SU-8 and Clariant\u27s image reversal photoresist AZ 5214E are utilized, along with a barrier layer, to effectively convert a positive photomask into a negative image. This technique utilizes standard photolithography chemicals, equipment, and processes, and opens the door for creating complementary MEMS structures without added fabrication delay and cost. Furthermore, the SU-8 masking layer is robust enough to withstand aggressive etch chemistries needed for fabrication research and development, bulk micromachining high-aspect ratio MEMS structures in silicon substrates, etc. This processing technique was successfully demonstrated by translating a positive photomask to an SU-8 layer that was then utilized as an etching mask for a series of trenches that were micromachined into a silicon substrate. In addition, whereas the SU-8 mask would normally be left in place after processing, a technique utilizing Rohm and Haas Microposit™ S1818 as a release layer has been developed so that the SU-8 masking material can be removed post-etching